林兆军，山东大学物理学院微电子系教授，博导

学习经历

1980.9~1984.7: 河北大学电子系学习获学士学位.

1985.9~1988.7: 河北大学电子系学习获硕士学位. 硕士论文内容是有关激光辅助扩散制备浅结二极管和三极管研究.

1994.9~1997.7: 中国科学院半导体所学习获博士学位. 博士论文内容是半导体量子点制备和性质研究.

科研经历

1988.9~1994.7: 河北大学电子系从事教学和科研工作.

1997.9~1999.9: 北京大学微电子所做博士后研究, 研究GaN电子器件的制备工艺和器件特性.

1999.10~2000.9: 在加拿大的McMaster University做研究，开展了InGaAsP-InP多量子阱激光器的研究工作。

2000.9月~2002.3: 在美国Northwestern University继续研究工作，研究工作包括：GaInAs/AlInAs量子级联激光、GaN基兰激光和发光管。

2002.3~2003.9: 在美国Ohio State University，从事了AlGaN/GaN异质结构肖特基接触及场效应晶体管的研制工作。

2003.12~现在: 山东大学物理学院工作.

研究领域

AlGaN/GaN 异质结场效应晶体管研究

近些年来，AlGaN/GaN异质结场效应晶体管（AlGaN/GaN HFET）一直作为半导体电子器件研究领域的热点而引起人们的广泛关注和极大兴趣。AlGaN/GaN异质结构的肖特基接触是AlGaN/GaN HFET的重要组成部分，肖特基接触金属对AlGaN势垒层应变影响的机理至今还不清楚，而肖特基接触金属对AlGaN势垒层应变的影响将改变AlGaN/GaN异质结构二维电子气密度等相关参数，由此对AlGaN/GaN HFET器件特性产生重要影响。我们的研究拟在通过AlGaN势垒层面极化电荷密度的分析计算，获取肖特基接触金属对AlGaN势垒层应变影响的信息，研究肖特基金属电子与AlGaN势垒层界面相互作用的机制，建立肖特基金属对AlGaN/GaN异质结构AlGaN势垒层应变影响的作用模型，以此推动GaN基电子器件研究的深入和发展。该研究包括器件制备、器件特性测试和器件特性分析.

低维半导体材料与器件研究

用物理或化学方法制备低维半导体材料, 通过微电子微细加工工艺将其制备成低维器件, 研究该材料体系的电子能态结构、声子能态结构、载流子输运及器特性.

SenTaurus-Device模拟分析半导体器件特性

利用SenTaurus-Device (业界标准器件的仿真)仿真工具，模拟分析新型半导体器件的器件特性，诸如电流-电压（I-V）、电容-电压（C-V）和频率特性等.

教学任务：

已承担了本科生和研究生以下课程的教学工作.

本科生课程: 半导体器件物理; 集成电路工艺.

研究生课程: 半导体器件理论; 超晶格材料与器件; 专业英语

正在参与项目：

1. 国家自然科学基金项目：肖特基接触金属对AlGaN势垒层应变影响研究， 项目号：10774090, 金额：30.00万元，研究期限：2008.01-2010.12. 项目负责人:林兆军

2. 参与项目, 纳米材料表面生化修饰与POPS的选择性富 集；2007CB936602；973项目；2007年-2011年。参与者：林兆军

发表的论文：

1 The influence of Schottky contact metals on the strain of AlGaN barrier layers

Zhaojun Lin, Jianzhi Zhao, Timothy Corrigan, Zhen Wang, Zhidong You,

Zhanguo Wang, Wu lu,

Journal of Applied Physics, (2008), Vol.103, P044503.

2 Electron mobility related to scattering caused by the strain variation of AlGaN

barrier layer in strained AlGaN/GaN heterostructures

Jianzhi Zhao, Zhaojun Lin*, Timothy Corrigan, Zhen Wang,

Zhidong You, Zhanguo Wang,

Applied Physics letters, (2007), 91, P173507.

3 Threshold voltage of AlGaN/GaN HFET

Zhaojun Lin, Jianzhi zhao, Min Zhang,

Chinese Journal of Semiconductor, (2007), Vol.28, Supplement, P54-56.

4 Thermal stability of strained AlGaN/GaN heterostructures

Zhang Min, Xiao Hongdi, Lin Zhaojun*,

Chinese Physics letters, (2006), Vol.23(7), P1900-1902.

5 Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaN/GaN heterostructures

Zhaojun Lin, Wu Lu

Journal of Applied Physics, (2006), 99, p014504-1

6 Quasi-Enhancement Mode of AlGaN/GaN HEMTs Grown on Sapphire Substrate

Jaesun Lee, Dongmin Liu, Zhaojun Lin, Wu Lu

Solid State Electronics, (2003), 47, pp2081-2084

7 Study of Schottky contacts on Strained AlGaN/GaN heterostructures

Zhaojun Lin, George R. Brandes, Wu Lu.

45th International Electronic Materials Conference, Salt Lake City, United States.

P57.

8 Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures

Zhaojun Lin, Wu Lu, Jaesun Lee, Dongmin Liu

Appl. Phys. Lett., (2004), 84 (9), pp.1585-1587

9 Influence of annealed Ohmic contact metals on the polarization of AlGaN barrier layer

Zhaojun Lin, Wu Lu, Jaesun Lee, Dongmin Liu

Electronics Letters, Vol. 39, Issue 19, (2003), pp. 1412-1414.

10 Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures:

Determination and effect of metal work functions

Zhaojun Lin, Wu lu, Jaesun Lee, Dongmin Liu

Appl. Phys. Lett., (2003), 82 (24), pp.4364-4366.

11 Characteristics of high quality p type AlxGa1-xN/GaN supper lattices

A. Yasan, R. McClintock, S. R. Darvish, Zhaojun Lin, K. Mi, P. Kung, and

M. Razeghi

Appl.Phys.Lett., (2002), 80 (12), pp.2108-2110.

12 Schottky barriers on n-GaN

Zhaojun Lin, Taiping Zhang, Guoying Wu

Chinese Journal of Semiconductor, (2000), 21(4), pp.369-372.

13 Study on CdSe nanoclusters by transmission electron microscope

Yan Xu, Zhaojun Lin, wei Chen, Keming Fang

Chinese Journal of Semiconductor, (1998), 19(3), pp.181-184.

14 Dielectric constant in quantum dots

Zhaojun Lin, Zhanguo Wang, Wei Chen, Lanying Lin

Chinese Science Bulletin, (1998), 43(7), pp.709-713.

15 Encapsulation and potential application of semiconductor clusters in zeolite

Molecular sieves

Wei Chen, Zhanguo Wang, Lanying Lin, Zhaojun Lin, Jiajun Qian

Progress in physics(in Chinese), (1997), 17(1), pp.83-117.

16 The preparation of I2 clusters and their absorption spectra

Zhaojun Lin, Zhanguo Wang, Wei Chen, Lanying Lin

Journal of Materials Science and Technology, (1997), 13(6), pp.518-520.

17 Formation, structure and fluorescence of CdS clusters in a mesoporous zeolite

Wei Chen, Zhanguo Wang, Zhaojun Lin, Lanying Lin

Solid State Communications, (1997), 105(2), pp.129-134

18 Absorption and luminescence of the surface states in ZnS nanoparticles

Wei Chen, Zhanguo Wang, Zhaojun Lin, Lanying Lin

Journal of Applied Physics, (1997), 82(6), pp.3111-3115.

19 New observation on the luminescence of CdS clusters in zeolite Y

Wei Chen, Zhanguo Wang, Zhaojun Lin, Lanying Lin

Solid State Communications, (1997), 101(5), pp.371-375.

20 Thermoluminescence of ZnS nanoparticles

Wei Chen, Zhanguo Wang, Zhaojun Lin, Lanying Lin

Appl.Phys.Lett., (1997), 70(11), pp.1465-1467.

21 Photoluminescence of ZnS clusters in zeolite Y

Wei Chen, Zhanguo Wang, Zhaojun Lin, Lanying Lin

Journal of Materials Science and Technology, (1997), 13(5), pp.397-404.

22 Low temperature hFe of silicon bipolar transistor

Shiqun Bo, Zhaojun Lin

Chinese Journal of Semiconductor, (1997), 18(6), pp.454-458.

23 Absorption spectra of Se8-ring clusters in zeolite 5A

Zhaojun Lin, Zhanguo Wang, Wei Chen, Lanying Lin

Materials Science&Engineering B, (1997), 47, pp.91-95.

24 The preparation of I2 clusters and their diffusion reflection spectra

Zhaojun Lin, Zhanguo Wang, Wei Chen, Lanying Lin

Chinese Science Bulletin, (1997), 42(15), pp.1727-1728.

25 Influence of the ring-ring interaction in Se8-ring clusters on their absorption

Zhaojun Lin, Zhanguo Wang, Wei Chen, Lanying Lin

Journal of Materials Science Letters, (1997)16(9), pp.732-734.

26 Size-Dependence of luminescence intensity of ZnS clusters in zeolite Y

Wei Chen, Zhanguo Wang, Zhaojun Lin, Lanying Lin

Proceeding of the 7th China-Japan conferences on materials science and crystal

Growth, (1996), pp.26-27.

27 Absorption and Raman spectra of Se chains in zeolite HZSM-5 and Y

Zhaojun Lin, Zhanguo Wang, Guohua Li, Wei Chen, Lanying Lin

Chinese Journal of Semiconductor, (1996), 17(12), pp.936-939.

28 New observation on the formation of PbS clusters in zeolite Y

Wei Chen, Zhanguo Wang, Zhaojun Lin, Lanying Lin

Appl.Phys.Lett., (1996), 68(14), pp.1990-1992.

29 The formation of ZnS cluster in zeolite Y

Wei Chen, Zhaojun Lin, Zhanguo Wang, Lanying Lin

Chinese Journal of Semiconductor, (1996), 17(12), pp.928-931.

30 Absorption and Raman spectra of Se8-ring clusters in zeolite 5A

Zhaojun Lin, Zhanguo Wang, Wei Chen, Lanying Lin

Solid State Communications, (1996)100(12), pp.841-843.

31 Some new observation on the formation and optical properties of CdS clusters in

Zeolite Y

Wei Chen, Zhaojun Lin, Zhanguo Wang, Lanying Lin

Solid State Communications, (1996), 100(2), pp.101-104.

任职：

中国电子学会半导体与集成技术分会第七届委员会委员；

Chinese Physics Letter 杂志评审。